Electrical Properties of Indium doped Alumina (Al2O3) Thin Films

Abstract

To know the electrical properties of any materials is very important for practical application of that material. In this paper I have tried to find out the proper electrical properties of Indium doped Alumina (Al₂O₃) for practical application of this Alumina. For this purpose all thin films are deposited on glass substrate by electron beam evaporation technique at a pressure of about 1.5 x 10-6 torr and at temperature of 307K. The thickness of Indium doped Al₂O₃ films (25%w, 30%w and 40% w of In₂O₃) range from 68 nm to 183 nm. For 25% In₂O₃ doped alumina the conductivity at room temperature is 24.10mho/cm, for 30% In₂O₃ doped alumina this value is 82.99mho/cm and for 40% In₂O₃ doped alumina this is 129.10mho/cm. The resistivity and sheet resistance decrease with the increase of doping concentration that means the conductivity increases with doping concentration.

DOI: http://dx.doi.org/10.11591/telkomnika.v14i2.7747