Tracking of Gaussian pulse release length inside mode-locked semiconductor laser amplifier

Mubarak Hamad Oglah, Watban Ibrahim Mahmood, Nawras Basheer Adday


The behavior of the optical pulse release was investigated during chirped pulses amplification, which consisted of two chirped fiber Bragg grating and one semiconductor optical amplifier (SOA). This occurred when the pulse width,  << carrier lifetime , as well as the effect of the length parameter on the shape and spectrum of the electric field, intensity, and phase of amplified pulses, were taken into consideration. The purpose of this research is to investigate the effect of release length on the temporal electric field laser amplifier while simultaneously generating optical pulses with the help of a mode-locked laser system semiconductor. In the scenario where τp and τc are taken into account, we discovered that the length of the release has a significant impact on the modes of the phase and the electric field.


Electric field; Gaussian pulse; Mode locked; Pulse duration; Semiconductor laser

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Indonesian Journal of Electrical Engineering and Computer Science (IJEECS)
p-ISSN: 2502-4752, e-ISSN: 2502-4760
This journal is published by the Institute of Advanced Engineering and Science (IAES) in collaboration with Intelektual Pustaka Media Utama (IPMU).

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