Fully synthesizable multi-gate dynamic voltage comparator for leakage reduction and low power application

Udara Yedukondalu, Vinod Arunachalam, Vasudha Vijayasri Bolisetty, Ravikumar Guru Samy

Abstract


The paper presents the implementation of a standard cell multigate fully synthesizable rail-to-rail dynamic voltage comparator. The dynamic voltage comparator works on deep sub-threshold supply voltage VDD =0.3 V with common mode inputs. The common-mode input range is VDD/2 with minimum input offset voltage ranging between 8mV to 28mV. Thus the circuit is simulated at 180nm Complementary Metal-Oxide Semiconductor (CMOS) process. Hence the dynamic voltage comparator has measured and tabulated by corresponding output voltage, power dissipation. But the performance of CMOS device is not good when compared with Fin Field-Effect Transistor (FinFET) device. The leakage current is more in CMOS devices while in FinFET device due to the control of multi-Gates on the channel, the leakage current is reduced. This will improve the power consumption in the FinFET device when compared to CMOS devices. The comparator results shows that CMOS device is inferior when compared with FinFET device comparator. For the implementation of the comparator Spice model were used in this work. The software used in the project is synopsis Hspice.

Keywords


Analog to digital converter; Fin field effect devices; Metal oxide; Offset noise; Voltage comparator

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DOI: http://doi.org/10.11591/ijeecs.v28.i2.pp716-723

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