The enhancement of the dual-layer phosphorus configuration in color uniformity and luminous flux of a light emitting diode

Abstract

A solid-state process was used to generate the green phosphor Ca₃Si₂O₄N₂:Eu²⁺. The luminescence characteristics, dispersed reflection spectra, and heat quenching were investigated initially, followed by the white light emitting diodes (wLED’s) manufacture by the Eu2+ stimulated Ca₃Si₂O₄N₂ phosphor. Based on the concentration of ion Eu²⁺, a wide green emission range localized between 510 and 550 nm was seen in Eu²⁺ -doped Ca3Si2O4N2. In Ca₃Si₂O₄N₂, the best doping concentration of Eu²⁺ was 1 mol%. An electric multipolar interaction process conveys energy among Eu²⁺ ions, with a necessary conversion distance of around 30.08 Å. Blending a near-ultraviolet (n-UV) light emitting diodes (LED) which has a GaN basis (380 nm) with the blue BaMgAl₁₀O₁₇:Eu²⁺, the green  Ca₃Si₂O₄N₂:Eu²⁺, and the red Ca₃Si₂O₄N₂:Eu²⁺ phosphors yielded a wLED with a 88.25 color-rendering indice Ra at 6029 K correlating color temperature.  Ca₃Si₂O₄N₂:Eu²⁺ appears to be a promising option to apply as a converting phosphor in wLED applications.