Sshel, Aicha, Departement of Electrical Engineering, EEA&TI Laboratory, Hassan II University of Casablanca FST Mohammedia, PO Box 146 Mohammedia 20650, Morocco., Morocco
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Vol 13, No 3: March 2019 - Articles
Investigation of the static current gain for InP/InGaAs single heterojunction bipolar transistor
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The Indonesian Journal of Electrical Engineering and Computer Science (IJEECS)
p-ISSN: 2502-4752, e-ISSN: 2502-4760
This journal is published by the Institute of Advanced Engineering and Science (IAES) in collaboration with Intelektual Pustaka Media Utama (IPMU).