Hanim, A.R., Universiti Teknikal Malaysia Melaka (UTeM), Malaysia

• Vol 14, No 2: May 2019 - Special_Invitation
  Comparative high-k material gate spacer impact in DG-FinFET parameter variations between two structures
  Abstract  PDF

This work is licensed under a Creative Commons Attribution-ShareAlike 4.0 International License.

The Indonesian Journal of Electrical Engineering and Computer Science (IJEECS)
p-ISSN: 2502-4752, e-ISSN: 2502-4760
This journal is published by the Institute of Advanced Engineering and Science (IAES) in collaboration with Intelektual Pustaka Media Utama (IPMU).

IJEECS visitor statistics