0.18μm CMOS Low Voltage Power Amplifier For WSN Application

Wu Chenjian, Li Zhiqun, Yao Nan, Zhang Meng, Chen Liang, Cao Jia

Abstract


This paper presents the design of a Class A/B power amplifier (PA) for 2.4-2.4835GHz Wireless Sensor Network (WSN) system in 0.18μm CMOS technology. The PA adopts the single-stage differential structure and the output power of the PA can be controlled by switching the sizes of transistors. Seven different level of output power can be obtained through a three- bit control code. The tested results shows that the proposed PA achieves power added efficiency (PAE) of 26.73% while delivering an output power of 6.35dBm at 1dB compression point. Its power gain is 15.87dB. With a low DC voltage supply of 1V, its power consumption is 15.3mW. The PA die size is 1070×610μm2.

 

DOI: http://dx.doi.org/10.11591/telkomnika.v11i8.3050


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