Reverse biased nanocrystalline graphite (NCG)/p-Si schottky junction for methane gas sensor

A. A. Nawawi, S.M. Sultan, S.F.A. Rahmah, P.I. Khalid, S.H. Pu

Abstract


An investigation on the effect of the reverse biased operation of NCG/p-Si Schottky contact during methane gas exposure at room temperature has been presented. The experimental results show the larger current shift at the reverse bias operation, compared to the forward bias by exposing to methane gas. This can be attributed to the adsorption of methane gas into the metal surface layer and produces a negative charge at the junction, thus reduces the barrier height of the device. The reverse barrier height was calculated under the reverse bias condition, demonstrated the value decreased from 0.58-0.53eV towards a higher concentration of methane gas. The Schottky junction also affected by the increase in a free carrier when exposure to the reducing gas such as methane. Raman spectra are reported to be detected at G, D and 2D band with the grain size 1.88nm to exhibit single crystallite graphite properties. The results correlate well with the 3D AFM scans reveal the RMS surface roughness of 1.1 to 2.8nm.

Keywords


Nanocrystalline graphite, Methane, Schottky diode, Barrier height, Reverse biased

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DOI: http://doi.org/10.11591/ijeecs.v15.i3.pp1217-1222

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